document number: 83663 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 593 optocoupler, phototransistor output, with base connection sfh601 vishay semiconductors description the sfh601 is an optocoupler with a gallium arsenide led emitter which is optically coupled with a silicon planar phototransistor detector. the component is packaged in a plastic plug-in case 20 ab din 41866. the coupler transmits signals between two electrically isolated circuits. features ? isolation test voltage (1.0 s), 5300 v rms ?v cesat 0.25 ( 0.4) v, i f = 10 ma, i c = 2.5 ma ? built to conform to vde requirements ? highest quality premium device ? long term stability ? storage temperature, - 55 to + 150 c ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 (vde 0884) available with option 1 ? csa 93751 ? bsi iec 60950; iec 60065 note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks sfh601-1 ctr 40 % to 80 %, dip-6 sfh601-2 ctr 63 % to 125 %, dip-6 sfh601-3 ctr 100 % to 200 %, dip-6 sfh601-4 ctr 160 % to 320 %, dip-6 sfh601-1x006 ctr 40 % to 80 %, dip-6 400 mil (option 6) sfh601-1x007 ctr 40 % to 80 %, smd-6 (option 7) sfh601-1x009 ctr 40 % to 80 %, smd-6 (option 9) sfh601-2x006 ctr 63 % to 125 %, dip-6 400 mil (option 6) sfh601-2x007 ctr 63 % to 125 %, smd-6 (option 7) sfh601-2x009 ctr 63 % to 125 %, smd-6 (option 9) sfh601-3x006 ctr 100 % to 200 %, dip-6 400 mil (option 6) sfh601-3x007 ctr 100 % to 200 %, smd-6 (option 7) sfh601-3x009 ctr 100 % to 200 %, smd-6 (option 9) sfh601-4x006 ctr 160 % to 320 %, dip-6 400 mil (option 6) sfh601-4x007 ctr % 160 to 320 %, smd-6 (option 7) sfh601-4x009 ctr % 160 to 320 %, smd-6 (option 9) absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6v dc forward current i f 60 ma surge forward current t = 10 s i fsm 2.5 a total power dissipation p diss 100 mw
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83663 594 rev. 1.4, 10-dec-08 sfh601 vishay semiconductors optocoupler, phototransistor output, with base connection notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (smd). refe r to wave profile for soldering conditi ons for through hole devices (dip). note t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. output collector emitter voltage v ce 100 v emitter base voltage v ebo 7v collector current i c 50 ma t = 1.0 ms i c 100 ma power dissipation p diss 150 mw coupler isolation test voltage between emitter and detector t = 1.0 s v iso 5300 v rms isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to +100 c junction temperature t j 100 c soldering temperature (2) max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 a v br 6v reverse current v r = 6 v i r 0.01 10 a capacitance v f = 0 v, f = 1 mhz c o 25 pf thermal resistance r thja 750 k/w output collector emitter capacitance f = 1 mhz, v ce = 5 v c ce 6.8 pf collector base capacitance f = 1 mhz, v cb = 5 v c cb 8.5 pf emitter base capacitance f = 1 mhz, v eb = 5 v c eb 11 pf thermal resistance r thja 500 k/w collector emitter leakage current v ce =10 v sfh601-1 i ceo 250na sfh601-2 i ceo 250na sfh601-3 i ceo 5 100 na sfh601-4 i ceo 5 100 na coupler saturation voltage collector emitter i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v capacitance (input to output) v i-o = 0, f = 1 mhz c io 0.6 pf absolute maximum ratings (1) parameter test condition symbol value unit
document number: 83663 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 595 sfh601 optocoupler, phototransistor output, with base connection vishay semiconductors note current transfer ratio and collector emitter leakage current by dash number. fig. 1 - linear operation (without saturation) fig. 2 - switching operation (with saturation) current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f at v ce = 5.0 v i f = 10 ma sfh601-1 ctr 40 80 % sfh601-2 ctr 63 125 % sfh601-3 ctr 100 200 % sfh601-4 ctr 160 320 % i f = 1 ma sfh601-1 ctr 13 30 % sfh601-2 ctr 22 45 % sfh601-3 ctr 34 70 % sfh601-4 ctr 56 90 % switching characteristics parameter test condition part symbol min. typ. max. unit non-saturated current v cc = 5 v, r l = 75 i f 10 ma rise time v cc = 5 v, r l = 75 t r 2s fall time v cc = 5 v, r l = 75 t f 2s turn-on time v cc = 5 v, r l = 75 t on 3s turn-off time v cc = 5 v, r l = 75 t off 2.3 s saturated current sfh601-1 i f 20 ma sfh601-2 i f 10 ma sfh601-3 i f 10 ma sfh601-4 i f 0.5 ma rise time sfh601-1 t r 2s sfh601-2 t r 3s sfh601-3 t r 3s sfh601-4 t r 4.6 s fall time sfh601-1 t f 11 s sfh601-2 t f 14 s sfh601-3 t f 14 s sfh601-4 t f 15 s turn-on time sfh601-1 t on 3s sfh601-2 t on 4.2 s sfh601-3 t on 4.2 s sfh601-4 t on 6s turn-off time sfh601-1 t off 18 s sfh601-2 t off 23 s sfh601-3 t off 23 s sfh601-4 t off 25 s isfh601_01 r l =75 v cc = 5 v i c 47 i f i f 1k v cc =5 v 47 isfh601_02
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83663 596 rev. 1.4, 10-dec-08 sfh601 vishay semiconductors optocoupler, phototransistor output, with base connection note as per iec 60747-5-2, 7.4.3.8.1, this optoc oupler is suitable for "safe electrical in sulation" only within the safety ratings . compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics t amb = 25 c, unless otherwise specified fig. 3 - current transfer ratio vs. diode current fig. 4 - current transfer ratio vs. diode current safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (according to iec 68 part 1) 55/100/21 comparative tracking index cti 175 399 v iotm 8000 v v iorm 890 v p so 700 mw i si 400 ma t si 175 c creepage distance standard dip-6 7 mm clearance distance standard dip-6 7 mm creepage distance 400 mil dip-6 8 mm clearance distance 400 mil dip-6 8 mm insulation thickness, reinforced rated per iec 60950 2.10.5.1 0.4 mm ( % ) 10 3 5 1 2 3 4 10 2 10 0 10 -1 10 1 2 10 0 55 5 i f (ma) isfh601_03 (t a = - 25 ?c, v ce = 5.0 v ) i c /i f = f (i f ) i c i f ( % ) 10 3 5 1 2 3 4 10 2 10 0 10 -1 10 1 2 10 0 55 5 i f (ma) isfh601_04 (t a = 0 c, v ce = 5.0 v ) i c /i f = f (i f ) i c i f dc p u lsmode p u lse
document number: 83663 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 597 sfh601 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 5 - current transfe r ratio vs. diode current fig. 6 - current transfe r ratio vs. diode current fig. 7 - current transfe r ratio vs. diode current fig. 8 - current transfer ratio vs. diode current fig. 9 - transistor characteristics fig. 10 - output characteristics 10 3 5 1 2 3 4 10 2 10 0 10 -1 10 1 2 10 0 55 5 isfh601_05 v ce = 5.0 v ) i c /i f = f (i f ) dc p u ls b etrie b p u lse ( % ) i f (ma) i c i f 10 3 5 1 2 3 4 10 2 10 0 10 -1 10 1 2 10 0 55 5 isfh601_06 t a = 50 c, v ce = 5.0 v) i c /i f = f (i f ) dc pulsbetrieb pulse ( % ) i c i f i f (ma) (%) 10 3 5 1 2 3 4 10 2 10 0 10 -1 10 1 2 (ma) 10 0 55 5 i f isfh601_07 t a = 75 c, v ce = 5.0 v) i c /i f = f (i f ) i c i f dc pulsbetrieb pulse 10 3 5 10 2 10 1 - 25 75 25 050c 5 isfh601_08 (i f = 10 ma, v ce = 5.0 v) i c /i f = f (t) 1 2 3 4 dc pulsbetrieb pulse ( % ) i c i f t a ( c) 30 10 20 0 015 10 5 v ce isfh601_09 i b = 10 a i b = 20 a i b = 40 a i b = 30 a i b = 2 a i b = 5 a i c = f (v ce ) (i f = 0) dc pulsbetrieb pulse i c (ma) 30 (ma) 10 20 0 015 10 5 i c v ce isfh601_10 i f = 14 ma i f = 12 ma i f = 10 ma i f = 6 ma i f = 8 ma i f = 4 ma i f = 2 ma i f = 1 ma i c = f (v ce ) dc pulsbetrieb pulse
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83663 598 rev. 1.4, 10-dec-08 sfh601 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 11 - forward voltage fig. 12 - collector em itter off-state current fig. 13 - saturation voltage vs. collector current and modulation depth sfh601-1 fig. 14 - saturation voltage vs. collector current and modulation depth sfh601-2 fig. 15 - saturation voltage vs. collector current and modulation depth sfh601-3 fig. 16 - saturation voltage vs. collector current and modulation depth sfh601-4 isfh601_11 v f ( v ) i f (ma) 25 50 75 1.2 1.1 1.0 0.9 10 - 1 10 0 10 1 10 2 10 0 10 -1 10 -2 10 -3 (a) 5 5 5 - 25 0 (c) 25 50 75 100 i ceo t a isfh601_12 v ce = 40 v v ce = 10 v i ceo = f (v, t) (i f = 0) 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 0 10 1 10 2 v cesat ( v ) i c (ma) isfh601_13 i f = 3 x i c v cesa t = f (i c ) 0 1.0 0. 8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 0 10 1 10 2 v cesat ( v ) i c (ma) isfh601_14 i f = 2 x i c i f = 3 x i c v cesat = f (i c ) 1.0 (v) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 0 10 1 5510 2 (ma) v ce sat i c isfh601_15 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 0 10 1 5510 2 isfh601_16 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) (v) v ce sat (ma) i c
document number: 83663 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 599 sfh601 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 17 - permissible pulse load fig. 18 - permissible power dissipation for transistor and diode fig. 19 - permissible forward current diode package dimensions in inches (millimeters) isfh601_17 i f (ma) t p (s) 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 4 10 3 10 2 10 1 d= t p t p t i f t d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 dc d = parameter, i f = f(t p ) 0 50 100 150 200 0 50 100 75 25 p tot (m w ) t a (c) isfh601_1 8 p tot = f (t a ) transistor diode isfh601_19 120 90 60 30 0 0255075100 i f (ma) t a (c) i f = f (t a ) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83663 600 rev. 1.4, 10-dec-08 sfh601 vishay semiconductors optocoupler, phototransistor output, with base connection package dimensions in inches (millimeters) min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0(4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 450
document number: 83663 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 601 sfh601 optocoupler, phototransistor output, with base connection vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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